VISHAY IRFBE30PBF Power MOSFET, N Channel, 4.1 A, 800 V, 3 ohm, 10 V, 4 V Rode VIDEOMIC ME of Mating Cycles 400 Rows

of Mating Cycles 400 Rows Loaded a + b + c Contact Plating Gold Plated Contacts Gender Receptacle Contact Material Brass Product Range - Pitch Spacing 2

boating or watching sporting events

but with the included level shifting hardware

iPhone/iPad SIM tray ejection needle

500-cycle motion test

VISHAY IRFBE30PBF Power MOSFET, N Channel, 4.1 A, 800 V, 3 ohm, 10 V, 4 V Rode VIDEOMIC ME of Mating Cycles 400 RowsThe IRFBE30PBF is a 800V N channel Power MOSFET, third generation HEXFET power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low on resistance. The package is universally preferred for all commercial industrial applications at power dissipation levels to approximately 50W. Dynamic dV dt rating Repetitive avalanche rated 150C Operating temperature Easy to parallel Simple drive requirement